MJD32CG, Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 3 A, 15 W, TO-252 (DPAK)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8627856266
- Артикул
- MJD32CG
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Type
- PNP
Цена по запросу
(от 119 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 100В, 3А, 15Вт, DPAK Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Type | PNP |
| Brand | ON Semiconductor |
| Width | 6.22 mm |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Series | MJD32C |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.587 |
| PCB changed | 2 |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Корпус | DPAK/TO-252 | TO252 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | DPAK |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 75 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 1.56 W |
| Minimum DC Current Gain | 10 |
| Maximum Base Current (A) | 1 |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 3 MHz |
| Maximum Power Dissipation | 1.56 W |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Frequency | 3 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 100 V |
| Continuous Collector Current | 3 A |
| Maximum DC Collector Current | 3 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 25 |
| Maximum Collector Base Voltage | 100 V |
| Maximum Power Dissipation (mW) | 1560 |
| кол-во в упаковке | 75 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 3(Min) |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.2@375mA@3A |
| Максимально допустимый ток к ( Iк макс.А) | 3 |