MJD31C1G, Trans GP BJT NPN 100V 3A 1560mW 3-Pin(3+Tab) IPAK Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001062953
- Артикул
- MJD31C1G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- SVHC
- Yes
Цена по запросу
(от 71 ₽)
Минимальный заказ: 1151 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 100V 3A 1560 МВт 3-контактная (3 + язычка) трубка IPAK
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| SVHC | Yes |
| Type | NPN |
| Brand | ON Semiconductor |
| Width | 6.22 mm |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Series | MJD31C |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Unit Weight | 0.139332 oz |
| Manufacturer | ON Semiconductor |
| Configuration | Single |
| Package Width | 2.38(Max) |
| Mounting Style | Through Hole |
| Package / Case | IPAK-3 |
| Package Length | 6.73(Max) |
| Product Category | Bipolar Power |
| Supplier Package | IPAK |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 75 |
| Standard Package Name | TO-251 |
| Pd - Power Dissipation | 1.56 W |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 10@3A@4V|25@1A@4V |
| Maximum Base Current (A) | 1 |
| Gain Bandwidth Product fT | 3 MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 100 V |
| Continuous Collector Current | 3 A |
| Maximum DC Collector Current | 3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 25 |
| Maximum Power Dissipation (mW) | 1560 |
| Maximum Base-Emitter Voltage (V) | 5 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Collector-Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 3(Min) |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.2@375mA@3A |
| Максимально допустимый ток к ( Iк макс.А) | 3 |