MJD31C-13, Bipolar Transistors - BJT 100V 5A NPN SMT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005059982
- Артикул
- MJD31C-13
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- MJD31C
- Вес, г
- 0.35
- Technology:
- Si
Цена по запросу
(от 71,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | MJD31C |
| Вес, г | 0.35 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 3A |
| Power Dissipation (Pd) | 1.56W |
| Pd - Power Dissipation: | 2.1 W |
| DC Current Gain hFE Max: | 40 at 3 A, 4 V |
| Transition Frequency (fT) | 3MHz |
| Gain Bandwidth Product fT: | 3 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 10@3A, 4V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 25 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 1.2 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.2V@3A, 375mA |