MJD3055T4G, 20uA 60V 1.75W 20@4A,4V 10A 2MHz 8V@10A,3.3A NPN -55°C~+150°C@(Tj) TO-252-2(DPAK) BIpolar TransIstors - BJT ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017601901
- Артикул
- MJD3055T4G
- Бренд
- ON Semiconductor***
- Brand
- ON Semiconductor
- Series
- MJD3055
- Packaging
- Cut Tape or Reel
- Pin Count
- 3
Цена по запросу
(от 89,41 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, 60 В, 10 А
Технические параметры
| Brand | ON Semiconductor |
| Series | MJD3055 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Вес, г | 0.44 |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | DPAK-3 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 20 W |
| Minimum DC Current Gain | 20 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 2 MHz |
| Maximum Power Dissipation | 20 W |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Frequency | 500 kHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 70 V |
| Continuous Collector Current | 10 A |
| Maximum DC Collector Current | 10 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 20 |
| Maximum Collector Base Voltage | 70 V |
| Maximum Collector Emitter Voltage | 60 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Collector-Emitter Saturation Voltage | 1.1 V |
| Граничная частота коэффициента передачи тока fгр.МГц | 2 |