MJD243T4G, 100nA 100V 1.4W 40@200mA,1V 4A 40MHz 600mV@1A,100mA NPN -65°C~+150°C@(Tj) DPAK-3 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017611573
- Артикул
- MJD243T4G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand:
- onsemi
Цена по запросу
(от 320 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 100V 4A 1400 МВт 3-контактный(2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand: | onsemi |
| EU RoHS | Compliant with Exemption |
| Series: | MJD243 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.35 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Package Type | DPAK(TO-252) |
| Subcategory: | Transistors |
| Корпус | TO-252/DPAK |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | TO-252 |
| Minimum DC Current Gain | 15 1A 1V|40 200mA 1V |
| Pd - Power Dissipation: | 12.5 W |
| Maximum Base Current (A) | 1 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 12.5 W |
| Gain Bandwidth Product fT: | 40 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 10 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 4 A |
| Maximum Emitter Base Voltage | 7 V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 4 A |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 40 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Collector-Emitter Saturation Voltage: | 600 mV |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.8 200mA 2A |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 50mA 500mA|0.6 100mA 1A |
| Максимально допустимый ток к ( Iк макс.А) | 4 |
| Граничная частота коэффициента передачи тока fгр.МГц | 40 |