MJD200T4G, Bipolar (BJT) Single Transistor, NPN, 25 V, 5 A, 12.5 W, TO-252 (DPAK), Surface Mount
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- Код товара
- 8212423449
- Артикул
- MJD200T4G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.53
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 102 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
25 В 1,4 Вт 45 при 2 А,1 В 5 А NPN TO-252-2(DPAK) Биполярные транзисторы - BJT ROHS
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.53 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | DPAK/TO-252 |
| Manufacturer: | onsemi |
| Package/Case: | TO-252-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Collector Current (Ic) | 5A |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 1.4W |
| Pd - Power Dissipation: | 12.5 W |
| Transition Frequency (fT) | 65MHz |
| Gain Bandwidth Product fT: | 65 MHz |
| Emitter- Base Voltage VEBO: | 8 V |
| DC Current Gain (hFE@Ic,Vce) | 45@2A, 1V |
| Collector- Base Voltage VCBO: | 40 V |
| Continuous Collector Current: | 5 A |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 70 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Collector-Emitter Saturation Voltage: | 1.8 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.8V@5A, 1A |
| Максимально допустимый ток к ( Iк макс.А) | 5 |