MJD122T4G, Darlington Transistors 8A 100V Bipolar Power NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005371430
- Артикул
- MJD122T4G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- RoHS
- Details
- Type
- NPN
Цена по запросу
(от 108,13 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
100 В 1000 при 4 В, 4A NPN 8A 1,75 Вт TO-252-2 (DPAK) Транзисторы Дарлингтона соответствуют требованиям ROHS
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| RoHS | Details |
| Type | NPN |
| Brand | ON Semiconductor |
| Width | 6.22 mm |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Series | MJD122 |
| EU RoHS | Compliant with Exemption |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1.6 |
| PCB changed | 2 |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Корпус | dpak(to-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 6.22(Max) |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3(DPAK) |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Transistor Type | NPN |
| Product Category | Darlington Transistors |
| Supplier Package | DPAK |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 75 |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Standard Package Name | TO-252 |
| Collector Current (Ic) | 8A |
| Pd - Power Dissipation | 20 W |
| Power Dissipation (Pd) | 1.75W |
| DC Current Gain hFE Max | 12000 |
| Minimum DC Current Gain | 1000@4A@4V|100@8A@4V |
| Transistor Configuration | Single |
| Transition frequency (fT) | - |
| Emitter- Base Voltage VEBO | 5 V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 100 V |
| Continuous Collector Current | 8 A |
| DC current gain (hFE@Vce,Ic) | 1000@4V, 4A |
| Maximum DC Collector Current | 8 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 1000 |
| Maximum Collector Base Voltage | 100 V |
| Maximum Power Dissipation (mW) | 1750 |
| Collector-emitter voltage (Vceo) | 100V |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Cut-off Current | 10 uA |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 100 |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector cut-off current (Icbo@Vcb) | 10uA |
| Maximum Continuous Collector Current | 8 A |
| Typical Current Gain Bandwidth (MHz) | 4(Min) |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (uA) | 10 |
| Maximum Base Emitter Saturation Voltage | 4.5 V |
| Maximum Base Emitter Saturation Voltage (V) | 4.5@80mA@8A |
| Maximum Continuous DC Collector Current (A) | 8 |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 4@80mA@8A|2@16mA@4A |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 4V@80mA, 8A |
| Максимальная рассеиваемая мощность ,Вт | 1.75 |
| Максимально допустимый ток к ( Iк макс.А) | 8 |
| Статический коэффициент передачи тока h21э мин | 1000 |
| Граничная частота коэффициента передачи тока fгр.МГц | 4 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 100 |