MJD122-1, 100V 1000 NPN 8A 20W TO-251-3 DarlIngton TransIstors ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044373665
- Артикул
- MJD122-1
- Бренд
- STMicroelectronics
- Type
- NPN
- Brand:
- STMicroelectronics
- Package
- 3TO-251
- Series:
- MJD122
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
СИЛОВОЙ БИПОЛЯРНЫЙ ТРАНЗИСТОР, 5A I(C), 100 В(BR)CEO, 1-ЭЛЕМЕНТНЫЙ, NPN, КРЕМНИЙ, TO-251AA, ПЛАСТИК/ЭПОКСИДНАЯ СМОЛА, 3 КОНТАКТА
Технические параметры
| Type | NPN |
| Brand: | STMicroelectronics |
| Package | 3TO-251 |
| Series: | MJD122 |
| Mounting | Through Hole |
| Rad Hard | No |
| Packaging | Bulk |
| Packaging: | Tube |
| Вес, г | 0.34 |
| Subcategory: | Transistors |
| Корпус | TO-251 |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Product Type: | Darlington Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-251-3 |
| Product Category: | Darlington Transistors |
| Структура | npn |
| Transistor Polarity: | NPN |
| Minimum DC Current Gain | 100@8A@4V|1000@4A@4V |
| Pd - Power Dissipation: | 20 W |
| DC Current Gain hFE Max: | 12000 |
| Peak DC Collector Current | 5 A |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 5 A |
| Maximum Collector Base Voltage | 100 V |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 100 |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Cut-off Current: | 10 uA |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Maximum Collector Emitter Saturation Voltage | 2@16mA@4A|4@80mA@8A V |
| Factory Pack Quantity: Factory Pack Quantity: | 75 |
| Максимально допустимый ток к ( Iк макс.А) | 8 |