MJD117T4, , Биполярный PNP транзистор , Darlington, 100В, 2А, 20Вт, корпус SOIC-16(0.154", 3.90mm Width)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8036685557
- Артикул
- MJD117T4
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type
- PNP
- Width
- 6.2mm
Цена по запросу
(от 48 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Широкий ассортимент биполярныx транзисторов NPN и PNP от STMicroelectronics, включая транзисторы общего назначения, Дарлингтона, силовые и высоковольтные устройства в корпусаx SMT и Through hole.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| Width | 6.2mm |
| Brand: | STMicroelectronics |
| EU RoHS | Compliant with Exemption |
| Series: | MJD117 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.53 |
| PCB changed | 2 |
| Part Status | Active |
| Package Type | DPAK(TO-252) |
| Subcategory: | Transistors |
| Корпус | DPAK/TO-252AA |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252 |
| Product Type: | Darlington Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Supplier Package | DPAK |
| Упаковка | REEL, 2500 шт. |
| Product Category: | Darlington Transistors |
| Transistor Polarity: | PNP |
| Standard Package Name | TO-252 |
| Minimum DC Current Gain | 500@500mA@3V|200@4A@3V|1000@2A@3V |
| Transistor Configuration | Single |
| Supplier Temperature Grade | Industrial |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Способ монтажа | Поверхностный |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Maximum Collector Base Voltage | 100 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 20000 |
| DC Collector/Base Gain hFE Min: | 200 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Cut-off Current | 0.02mA |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Collector Cut-off Current: | 20 uA |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Maximum Continuous Collector Current | 4 A |
| Typical Current Gain Bandwidth (MHz) | 25(Min) |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (uA) | 20 |
| Maximum Base Emitter Saturation Voltage | 4 V |
| Maximum Base Emitter Saturation Voltage (V) | 4@40mA@4A |
| Maximum Continuous DC Collector Current (A) | 2 |
| Maximum Collector Emitter Saturation Voltage | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Collector-Emitter Saturation Voltage (V) | 3@40mA@4A|2@8mA@2A |
| Транспортная упаковка: размер/кол-во | 61*51*51/2500 |