MJD112G, Транзистор силовой биполярный DPAK
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- Код товара
- 8024747213
- Артикул
- MJD112G
- Бренд
- ON Semiconductor***
- Width
- 6.22mm
- Mounting
- Surface Mount
- Polarity
- NPN
- Packaging
- Rail/Tube
Цена по запросу
(от 80,50 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, составной (Darlington), 100 В, 2 А, 20Вт
Технические параметры
| Width | 6.22mm |
| Mounting | Surface Mount |
| Polarity | NPN |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Вес, г | 0.33 |
| Package Type | DPAK(TO-252) |
| Rad Hardened | No |
| Корпус | DPAK/TO-252AA |
| Configuration | Single |
| Mounting Type | Surface Mount |
| DC Current Gain | 500 |
| Transistor Type | NPN |
| Power Dissipation | 1.75(W) |
| Number of Elements | 1 |
| Emitter-Base Voltage | 5(V) |
| Operating Temp Range | -65C to 150C |
| Collector Current (DC) | 2(A) |
| Collector-Base Voltage | 100(V) |
| Minimum DC Current Gain | 1000 |
| Transistor Configuration | Single |
| Collector-Emitter Voltage | 100(V) |
| Maximum Power Dissipation | 20 W |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Maximum Collector Base Voltage | 100 V |
| Maximum Collector Cut-off Current | 20µA |
| Maximum Collector Emitter Voltage | 100 V |
| Collector-Emitter Saturation Voltage | 2(V) |
| Maximum Continuous Collector Current | 2 A |
| Operating Temperature Classification | Military |
| Base-Emitter Saturation Voltage (Max) | 4(V) |
| Maximum Base Emitter Saturation Voltage | 4 V |
| Maximum Collector Emitter Saturation Voltage | 3 V |