MJD112-1G, Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8024822528
- Артикул
- MJD112-1G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- Case
- IPAK
- Type
- NPN
- Width
- 2.38mm
Цена по запросу
(от 32 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Трубка IPAK Trans Darlington NPN 100V 2A мощностью 1750 МВт с 3-контактным разъемом (3+ язычка)
Технические параметры
| Tab | Tab |
| Case | IPAK |
| Type | NPN |
| Width | 2.38mm |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Вес, г | 0.41 |
| PCB changed | 3 |
| Part Status | Active |
| Current gain | 100…12000 |
| Manufacturer | ONSEMI |
| Package Type | IPAK(TO-251) |
| Polarisation | bipolar |
| Configuration | Single |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Supplier Package | IPAK |
| Collector current | 2A |
| Power dissipation | 1.75W |
| Kind of transistor | Darlington |
| Type of transistor | NPN |
| Структура | npn |
| Standard Package Name | TO-251 |
| Maximum DC Current Gain | 12000 2A 3V |
| Minimum DC Current Gain | 1000 |
| Maximum Base Current (A) | 0.05 |
| Transistor Configuration | Single |
| Collector-emitter voltage | 100V |
| Maximum Power Dissipation | 20 W |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Maximum Collector Base Voltage | 100 V |
| Maximum Power Dissipation (mW) | 1750 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Cut-off Current | 20µA |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 100 |
| Typical Transition Frequency (MHz) | 25(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Collector Current | 2 A |
| Operating Junction Temperature (°C) | -65 to 150 |
| Typical Current Gain Bandwidth (MHz) | 25(Min) |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (uA) | 20 |
| Maximum Base Emitter Saturation Voltage | 4 V |
| Maximum Continuous DC Collector Current (A) | 2 |
| Maximum Collector Emitter Saturation Voltage | 3 V |