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MD2001FX, Trans GP BJT NPN 700V 12A 58000mW 3-Pin(3+Tab) ISOWATT218FX Tube

MD2001FX, Trans GP BJT NPN 700V 12A 58000mW 3-Pin(3+Tab) ISOWATT218FX Tube

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8001122406
Артикул
MD2001FX
Бренд
STMicroelectronics
Tab
Tab
PPAP
No
SVHC
Yes
Type
NPN
Цена по запросу
(от 290 ₽)
Минимальный заказ: 300 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT NPN 700V 12A 58000 МВт 3-контактная (3 + язычка) трубка ISOWATT218FX

Технические параметры

TabTab
PPAPNo
SVHCYes
TypeNPN
Brand:STMicroelectronics
MaterialSi
MountingThrough Hole
PackagingTube
Pin Count3
AutomotiveNo
Packaging:Tube
Вес, г0.05
PCB changed3
Part StatusActive
Technology:Si
Subcategory:Transistors
ConfigurationSingle
Manufacturer:STMicroelectronics
Package Width5.7(Max)
Package/Case:ISOWATT-218FX-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package Length15.7(Max)
Mounting Style:Through Hole
Product CategoryBipolar Power
Supplier PackageISOWATT218FX
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Standard Package NameTO
Factory Pack Quantity:300
SVHC Exceeds ThresholdYes
Minimum DC Current Gain4.5@6A@5V
Pd - Power Dissipation:58 W
DC Current Gain hFE Max:7
Supplier Temperature GradeIndustrial
Emitter- Base Voltage VEBO:9 V
Number of Elements per Chip1
Continuous Collector Current:12 A
Maximum DC Collector Current:12 A
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)58000
DC Collector/Base Gain hFE Min:4.5
Maximum DC Collector Current (A)12
Maximum Emitter Base Voltage (V)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Collector- Emitter Voltage VCEO Max:700 V
Collector-Emitter Saturation Voltage:1.8 V
Maximum Collector-Emitter Voltage (V)700
Maximum Base Emitter Saturation Voltage (V)1.2@1.5A@6A
Maximum Collector-Emitter Saturation Voltage (V)1.8@1.5A@6A

Техническая документация