KSP44TF, Транзистор: NPN; биполярный; 400В; 0,3А; 0,625Вт; TO92
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- Код товара
- 8017613115
- Артикул
- KSP44TF
- Бренд
- ON Semiconductor***
- Case
- TO92
- Brand:
- onsemi/Fairchild
- Series:
- KSP44
- Mounting
- THT
Цена по запросу
(от 68 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Широкий ассортимент транзисторов с биполярным переxодом (BJT) обеспечивает комплексные решения для различныx применений в сxемотеxнике.
Технические параметры
| Case | TO92 |
| Brand: | onsemi/Fairchild |
| Series: | KSP44 |
| Mounting | THT |
| Pin Count | 3 |
| Packaging: | Reel, Cut Tape |
| Вес, г | 0.31 |
| Technology: | Si |
| Current gain | 40…200 |
| Manufacturer | ONSEMI |
| Package Type | TO-92 |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Корпус | TO-92 |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Package/Case: | TO-92-3 Kinked Lead |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Kind of package | reel, tape |
| Mounting Style: | Through Hole |
| Transistor Type | NPN |
| Collector current | 0.3A |
| Power dissipation | 0.625W |
| Product Category: | Bipolar Transistors-BJT |
| Type of transistor | NPN |
| Структура | npn |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 300mA |
| Power Dissipation (Pd) | 625mW |
| Minimum DC Current Gain | 50 |
| Pd - Power Dissipation: | 625 mW |
| DC Current Gain hFE Max: | 200 |
| Transistor Configuration | Single |
| Collector-emitter voltage | 400V |
| Maximum Power Dissipation | 625 mW |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum Operating Frequency | 1 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 50@10mA, 10V |
| Maximum DC Collector Current | 300 mA |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 500 V |
| Continuous Collector Current: | 300 mA |
| Maximum DC Collector Current: | 300 mA |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 500 V |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 50 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Maximum Collector Emitter Voltage | 400 V |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| Collector-Emitter Saturation Voltage: | 750 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 400V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 750mV@50mA, 5mA |
| Максимальная рассеиваемая мощность ,Вт | 25 |