KSC5502DTM, Транзистор биполярный BJT 600 В 87,83 Вт 20 при 500 мА, 2,5 В 2 А 11 МГц 400 мВ при 1 А, 200 мА NPN +150°C @(Tj) TO-252-2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017613100
- Артикул
- KSC5502DTM
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series:
- KSC5502D
- Category
- Bipolar Power
- Mounting
- Surface Mount
Цена по запросу
(от 109,23 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Широкий ассортимент транзисторов с биполярным переxодом (BJT) обеспечивает комплексные решения для различныx применений в сxемотеxнике.
Технические параметры
| Brand: | onsemi/Fairchild |
| Series: | KSC5502D |
| Category | Bipolar Power |
| Mounting | Surface Mount |
| Frequency | 11(MHz) |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Вес, г | 0.48 |
| Technology: | Si |
| Output Power | Not Required(W) |
| Package Type | DPAK(TO-252) |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Корпус | DPAK/TO-252 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| DC Current Gain | 15@200MA@1V/4@1A@1V |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type | NPN |
| Power Dissipation | 50(W) |
| Product Category: | Bipolar Transistors-BJT |
| Number of Elements | 1 |
| Структура | npn |
| Transistor Polarity | NPN |
| Emitter-Base Voltage | 12(V) |
| Operating Temp Range | -65C to 150C |
| Transistor Polarity: | NPN |
| Collector Current (DC) | 2(A) |
| Collector Current (Ic) | 2A |
| Collector-Base Voltage | 1200(V) |
| Power Dissipation (Pd) | 50W |
| Minimum DC Current Gain | 12 |
| Pd - Power Dissipation: | 87.83 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 50 W |
| Transition Frequency (fT) | 11MHz |
| Gain Bandwidth Product fT: | 11 MHz |
| Emitter- Base Voltage VEBO: | 12 V |
| Maximum Operating Frequency | 1 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 4@1A, 1V |
| Maximum DC Collector Current | 2 A |
| Maximum Emitter Base Voltage | 12 V |
| Collector- Base Voltage VCBO: | 1.2 kV |
| Continuous Collector Current: | 2 A |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 1200 V |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 14 |
| Collector Cut-Off Current (Icbo) | 100uA |
| Maximum Collector Emitter Voltage | 600 V |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Operating Temperature Classification | Military |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 600V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@1A, 200mA |
| Граничная частота коэффициента передачи тока fгр.МГц | 11 |