JANTXV2N5666, Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-5 Bag
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- Код товара
- 8049693716
- Артикул
- JANTXV2N5666
- Бренд
- Microchip Technology
- PPAP
- No
- Type
- NPN
- Diameter
- 9.4(Max)mm
- Material
- Si
Цена по запросу
(от 5 460 ₽)
Минимальный заказ: 6 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 200V 5A 1200 МВт 3-контактный разъем TO-5 Bag
Технические параметры
| PPAP | No |
| Type | NPN |
| Diameter | 9.4(Max)mm |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Bag |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Product Category | Bipolar Power |
| Supplier Package | TO-5 |
| Структура | npn |
| Standard Package Name | TO |
| Minimum DC Current Gain | 5@5A@5V|40@0.5A@2V|40@1A@5V|15@3A@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1200 |
| Maximum Base-Emitter Voltage (V) | 6 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Collector-Base Voltage (V) | 250 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 200 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.5@1A@5A|1.2@0.3A@3A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@0.3A@3A|1@1A@5A |