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JANTXV2N2907AUB, Trans GP BJT PNP 60V 0.6A 400mW 4-Pin Case UB

JANTXV2N2907AUB, Trans GP BJT PNP 60V 0.6A 400mW 4-Pin Case UB

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Код товара
8062293521
Артикул
JANTXV2N2907AUB
Бренд
Microchip Technology
PPAP
No
Type
PNP
Brand:
Microchip/Microsemi
Category
Bipolar Small Signal
Цена по запросу
(от 2 080 ₽)
Минимальный заказ: 15 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT PNP 60V 0.6A 400 МВт 4-контактный корпус UB

Технические параметры

PPAPNo
TypePNP
Brand:Microchip/Microsemi
CategoryBipolar Small Signal
MaterialSi
MountingSurface Mount
Pin Count4
AutomotiveNo
Packaging:Waffle
Вес, г1
PCB changed4
Part StatusActive
Technology:Si
Subcategory:Transistors
ConfigurationSingle
Manufacturer:Microchip
Package Width2.74(Max)
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package Length3.25(Max)
Mounting Style:SMD/SMT
Supplier PackageCase UB
Product Category:Bipolar Transistors-BJT
Transistor Polarity:PNP
Factory Pack Quantity:1
Minimum DC Current Gain75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
Pd - Power Dissipation:500 mW
Supplier Temperature GradeMilitary
Emitter- Base Voltage VEBO:5 V
Number of Elements per Chip1
Collector- Base Voltage VCBO:60 V
Maximum DC Collector Current:600 mA
Maximum Operating Temperature:+200 C
Maximum Power Dissipation (mW)400
Minimum Operating Temperature:-65 C
Maximum Base-Emitter Voltage (V)5
Maximum DC Collector Current (A)0.6
Maximum Collector-Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Collector- Emitter Voltage VCEO Max:60 V
Operating Junction Temperature (°C)-65 to 200
Collector-Emitter Saturation Voltage:400 mV
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)10000
Maximum Base-Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA

Техническая документация