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JANTX2N3700UB, 80V 500mW 50@500mA,10V 1A NPN SMD-3P Bipolar (BJT)

JANTX2N3700UB, 80V 500mW 50@500mA,10V 1A NPN SMD-3P Bipolar (BJT)

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Код товара
8048831043
Артикул
JANTX2N3700UB
Бренд
Microchip Technology
PPAP
No
Type
NPN
Grade
Military
EU RoHS
Not Compliant
Цена по запросу
(от 4 220 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 80 В 1 А мощностью 500 МВт для поверxностного монтажа UB

Технические параметры

PPAPNo
TypeNPN
GradeMilitary
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
Вес, г0.06
PCB changed4
Part StatusActive
Power - Max500 mW
ConfigurationSingle
Mounting TypeSurface Mount
Package Width2.74(Max)
QualificationMIL-PRF-19500/391
Package / Case3-SMD, No Lead
Package Length3.25(Max)
Transistor TypeNPN
EDA / CAD ModelsJANTX2N3700UB by Ultra Librarian
Product CategoryBipolar Power
Supplier PackageCase UB
Структураnpn
Operating Temperature-65°C ~ 200°C(TJ)
Minimum DC Current Gain50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V
Supplier Device PackageUB
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector (Ic) (Max)1 A
Maximum Power Dissipation (mW)500
Current - Collector Cutoff (Max)10nA
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)140
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.1@15mA@150mA
Voltage - Collector Emitter Breakdown (Max)80 V
Maximum Collector-Emitter Saturation Voltage (V)0.2@15mA@150mA|0.5@50mA@500mA

Техническая документация