JANTX2N3700, Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001330627
- Артикул
- JANTX2N3700
- Бренд
- Semicoa Semiconductors
- PPAP
- No
- Type
- NPN
- Diameter
- 5.84(Max)
- Material
- Si
Цена по запросу
(от 990 ₽)
Минимальный заказ: 31 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 80V 1A 500 МВт 3-контактный TO-18
Технические параметры
| PPAP | No |
| Type | NPN |
| Diameter | 5.84(Max) |
| Material | Si |
| Mounting | Through Hole |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Корпус | TO-18/КТ-1-7 |
| Configuration | Single |
| Product Category | Bipolar Power |
| Supplier Package | TO-18 |
| Структура | npn |
| Standard Package Name | TO |
| Minimum DC Current Gain | 100@150mA@10V|15@1A@10V|50@1mA@10V|50@500mA@10V|90@10mA@10V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 500 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 140 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 200 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@15mA@150mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@15mA@150mA|0.5@50mA@500mA |