JANTX2N3440, Bipolar Transistors - BJT 250V 1A 800mW Power BJT THT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004581644
- Артикул
- JANTX2N3440
- Бренд
- Microchip Technology
- PPAP
- No
- SVHC
- Yes
- Type
- NPN
- Diameter
- 9.4(Max)
Цена по запросу
(от 1 730 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Сумка Trans GP BJT NPN 250V 1A 800 МВт с 3-контактным разъемом TO-39
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| Diameter | 9.4(Max) |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Bag |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Product Category | Bipolar Power |
| Supplier Package | TO-39 |
| Standard Package Name | TO |
| Minimum DC Current Gain | 40@20mA@10V|30@2mA@10V|10@0.2mA@10V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 800 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 300 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 250 |
| Maximum Base Emitter Saturation Voltage (V) | 1.3@4mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@4mA@50mA |