JANTX2N3019S, Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001677651
- Артикул
- JANTX2N3019S
- Бренд
- Semicoa Semiconductors
- HTS
- 8541.29.00.95
- Type
- NPN
- EU RoHS
- Not Compliant
- Diameter
- 9.4(Max)
Цена по запросу
(от 1 320 ₽)
Минимальный заказ: 23 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Type | NPN |
| EU RoHS | Not Compliant |
| Diameter | 9.4(Max) |
| Material | Si |
| Mounting | Through Hole |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Корпус | TO-39 |
| Configuration | Single |
| Package Height | 6.6(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-39 |
| Структура | npn |
| Minimum DC Current Gain | 90@10mA@10V|15@1A@10V|50@0.1mA@10V|100@150mA@10V|50@500mA@10V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 800 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 140 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@15mA@150mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@15mA@150mA|0.5@50mA@500mA |