JANTX2N2920, Bipolar Transistors - BJT 60V 30mA 350mW Dual Small-Signal BJT THT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062577302
- Артикул
- JANTX2N2920
- Бренд
- Microchip Technology
- PPAP
- No
- Type
- NPN
- Brand:
- Microchip/Microsemi
- Diameter
- 9.4(Max)
Цена по запросу
(от 8 750 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT Small-Signal BJT
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Microchip/Microsemi |
| Diameter | 9.4(Max) |
| Material | Si |
| Mounting | Through Hole |
| Pin Count | 6 |
| Automotive | No |
| Packaging: | Bulk |
| Вес, г | 27.35 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Dual |
| Manufacturer: | Microchip |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | Through Hole |
| Product Category | Bipolar Small Signal |
| Supplier Package | TO-78 |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Standard Package Name | TO |
| Factory Pack Quantity: | 1 |
| Minimum DC Current Gain | 175@10uA@5V|235@100uA@5V|300@1mA@5V |
| Pd - Power Dissipation: | 350 mW |
| DC Current Gain hFE Max: | 1000 |
| Supplier Temperature Grade | Military |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 70 V |
| Continuous Collector Current: | 30 mA |
| Maximum DC Collector Current: | 30 mA |
| Maximum Operating Temperature: | +200 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 300 |
| Maximum DC Collector Current (A) | 0.03 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 70 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Operating Junction Temperature (°C) | -65 to 200 |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Maximum Base Emitter Saturation Voltage (V) | 1@100uA@1mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@100uA@1mA |