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JANTX2N2907AUA/TR, Bipolar (BJT) Transistor PNP 60 V 600 mA 1.8 W Surface Mount UA

JANTX2N2907AUA/TR, Bipolar (BJT) Transistor PNP 60 V 600 mA 1.8 W Surface Mount UA

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Код товара
8064269073
Артикул
JANTX2N2907AUA/TR
Бренд
Microchip Technology
PPAP
No
Type
PNP
Grade
Military
Category
Bipolar Small Signal
Цена по запросу
(от 4 750 ₽)
Минимальный заказ: 100 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор PNP 60 В 600 мА 1,8 Вт для поверxностного монтажа UA

Технические параметры

PPAPNo
TypePNP
GradeMilitary
CategoryBipolar Small Signal
MaterialSi
MountingSurface Mount
PackagingTape and Reel
Pin Count4
AutomotiveNo
Вес, г0.05
PCB changed4
Part StatusActive
Power - Max1.8 W
ConfigurationSingle
Mounting TypeSurface Mount
QualificationMIL-PRF-19500/291
Package / Case4-SMD, No Lead
Transistor TypePNP
Supplier PackageUA
Структураpnp
Operating Temperature-65°C ~ 200°C(TJ)
Minimum DC Current Gain75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
Supplier Device PackageUA
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector (Ic) (Max)600 mA
Maximum Power Dissipation (mW)400
Current - Collector Cutoff (Max)50nA
Maximum Base-Emitter Voltage (V)5
Maximum DC Collector Current (A)0.6
Maximum Collector-Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)10000
Maximum Base-Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Voltage - Collector Emitter Breakdown (Max)60 V
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA

Техническая документация