JANTX2N2060, Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-78 Bag
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- Код товара
- 8056530766
- Артикул
- JANTX2N2060
- Бренд
- Microchip Technology
- PPAP
- No
- Type
- NPN
- Brand:
- Microchip/Microsemi
- Category
- Bipolar Small Signal
Цена по запросу
(от 18 100 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Сумка Trans GP BJT NPN 60V 0,5A 600 МВт с 6-контактным разъемом TO-78
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Microchip/Microsemi |
| Category | Bipolar Small Signal |
| Diameter | 9.4(Max) |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Bag |
| Pin Count | 6 |
| Automotive | No |
| Packaging: | Bulk |
| Вес, г | 0.05 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Dual |
| Manufacturer: | Microchip |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | Through Hole |
| Supplier Package | TO-78 |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Standard Package Name | TO |
| Minimum DC Current Gain | 50@10mA@5V, 25@10uA@5V, 30@100uA@5V, 40@1mA@5V |
| Pd - Power Dissipation: | 600 mW |
| DC Current Gain hFE Max: | 150 |
| Supplier Temperature Grade | Military |
| Emitter- Base Voltage VEBO: | 7 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +200 C |
| Maximum Power Dissipation (mW) | 600 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 50 |
| Maximum Base-Emitter Voltage (V) | 7 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Collector-Base Voltage (V) | 100 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Base-Emitter Saturation Voltage (V) | 0.9@5mA@50mA |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@5mA@50mA |