JANS2N3637, Bipolar Transistors - BJT 175V 1A 1W Small-Signal BJT THT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005439623
- Артикул
- JANS2N3637
- Бренд
- Microchip Technology
- PPAP
- No
- RoHS
- N
- Type
- PNP
- Brand:
- Microchip/Microsemi
Цена по запросу
(от 19 530 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT BJTs
Технические параметры
| PPAP | No |
| RoHS | N |
| Type | PNP |
| Brand: | Microchip/Microsemi |
| Diameter | 9.4(Max)mm |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tray |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Microchip |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category | Bipolar Power |
| Supplier Package | TO-39 |
| Упаковка | Tray |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Технология | Si |
| Standard Package Name | TO |
| Factory Pack Quantity: | 1 |
| Minimum DC Current Gain | 90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V|55@0.1mA@10V |
| Pd - Power Dissipation: | 1 W |
| Тип продукта | BJTs - Bipolar Transistors |
| Подкатегория | Transistors |
| Supplier Temperature Grade | Military |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Торговая марка | Microchip / Microsemi |
| Collector- Base Voltage VCBO: | 175 V |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +200 C |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature: | -65 C |
| Maximum Base-Emitter Voltage (V) | 5 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Collector-Base Voltage (V) | 175 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Категория продукта | Биполярные транзисторы - BJT |
| Collector- Emitter Voltage VCEO Max: | 175 V |
| Operating Junction Temperature (°C) | -65 to 200 |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Maximum Collector-Emitter Voltage (V) | 175 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Maximum Base-Emitter Saturation Voltage (V) | 0.8@1mA@10mA|0.9@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@1mA@10mA|0.6@5mA@50mA |
| Размер фабричной упаковки | 50 |