IXYB82N120C3H1, Транзистор: IGBT, GenX3™, 1,2кВ, 82А, 1,04кВт, PLUS264™
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- Код товара
- 8062890054
- Артикул
- IXYB82N120C3H1
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Pin Count
- 3
- Packaging:
- Tube
- Вес, г
- 10.2
Цена по запросу
(от 3 310 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: IGBT, GenX3™, 1,2кВ, 82А, 1,04кВт, PLUS264™ Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Brand: | IXYS |
| Pin Count | 3 |
| Packaging: | Tube |
| Вес, г | 10.2 |
| Technology: | Si |
| Channel Type | N |
| Package Type | PLUS264 |
| Subcategory: | IGBTs |
| Manufacturer: | IXYS |
| Mounting Type | Through Hole |
| Package/Case: | TO-264-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Switching Speed | 50kHz |
| Product Category: | IGBTs |
| Factory Pack Quantity: | 25 |
| Pd - Power Dissipation: | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1040 W |
| Maximum Gate Emitter Voltage | ±20V |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Collector Emitter Voltage | 1200 V |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Continuous Collector Current Ic Max: | 164 A |
| Maximum Continuous Collector Current | 164 A |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Continuous Collector Current at 25 C: | 164 A |