IXXH75N60B3D1, Транзистор IGBT, GenX3™, 600В, 75А, 750Вт, TO247-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017544766
- Артикул
- IXXH75N60B3D1
- Бренд
- Ixys Corporation
- Type
- -
- Brand:
- IXYS
- Packaging:
- Tube
- Вес, г
- 6
Цена по запросу
(от 1 140 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
750 Вт 160 А 600 В TO-247-3 IGBTs ROHS
Технические параметры
| Type | - |
| Brand: | IXYS |
| Packaging: | Tube |
| Вес, г | 6 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | IXYS |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | IGBT Transistors |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Collector Current (Ic) | 160A |
| Factory Pack Quantity: | 30 |
| Power Dissipation (Pd) | 750W |
| Pd - Power Dissipation: | 750 W |
| Turn?on Delay Time (Td(on)) | 35ns |
| Input Capacitance (Cies@Vce) | 3.29nF@25V |
| Turn?on Switching Loss (Eon) | 1.7mJ |
| Diode Forward Voltage (Vf@If) | 2.7V@30A |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Total Gate Charge (Qg@Ic,Vge) | - |
| Turn?off Delay Time (Td(off)) | 118ns |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Pulsed Collector Current (Icm) | 300A |
| Turn?off Switching Loss (Eoff) | 1.5mJ |
| Diode Reverse Recovery Time (Trr) | 25ns |
| Collector Cut-Off Current (Ices@Vce) | 25uA@600V |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Continuous Collector Current at 25 C: | 160 A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.6V@60A, 15V |