IXTY1R4N120P, Транзистор N-MOSFET, 1,2кВ, 86Вт, TO252, 900нс
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- Код товара
- 8062467689
- Артикул
- IXTY1R4N120P
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Packaging:
- Tube
- Вес, г
- 0.35
- Technology:
- Si
Цена по запросу
(от 515,65 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Packaging: | Tube |
| Вес, г | 0.35 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 24.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 70 |
| Pd - Power Dissipation: | 86 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Id - Continuous Drain Current: | 1.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 15 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |