IXTY08N100P, Транзистор N-MOSFET, 1кВ, 0,8А, 42Вт, TO252, 750нс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062595408
- Артикул
- IXTY08N100P
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 34 ns
- Packaging:
- Tube
- Rise Time:
- 37 ns
Цена по запросу
(от 467,14 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 34 ns |
| Packaging: | Tube |
| Rise Time: | 37 ns |
| Вес, г | 0.35 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.3 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 70 |
| Pd - Power Dissipation: | 42 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 19 ns |
| Typical Turn-Off Delay Time: | 35 ns |
| Id - Continuous Drain Current: | 800 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 20 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |