IXTT6N120 IXYS
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- Код товара
- 8072317437
- Артикул
- IXTT6N120
- Бренд
- Ixys Corporation
- Type:
- High Voltage Power MOSFET
- Brand:
- IXYS
- Series:
- IXTT6N120
- Fall Time:
- 18 ns
Цена по запросу
(от 1 110 ₽)
Минимальный заказ: 16 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | High Voltage Power MOSFET |
| Brand: | IXYS |
| Series: | IXTT6N120 |
| Fall Time: | 18 ns |
| Packaging: | Tube |
| Rise Time: | 33 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-268-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 56 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 28 ns |
| Typical Turn-Off Delay Time: | 42 ns |
| Id - Continuous Drain Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3 S |
| Rds On - Drain-Source Resistance: | 2.6 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |