IXTT3N200P3HV, Транзистор N-MOSFET, 2кВ, 3А, 520Вт, TO268HV, 420нс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062950938
- Артикул
- IXTT3N200P3HV
- Бренд
- Ixys Corporation
- Type:
- High Voltage
- Brand:
- IXYS
- Product:
- Power MOSFET Modules
- Fall Time:
- 60 ns
Цена по запросу
(от 6 860 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | High Voltage |
| Brand: | IXYS |
| Product: | Power MOSFET Modules |
| Fall Time: | 60 ns |
| Packaging: | Tube |
| Rise Time: | 27 ns |
| Вес, г | 4 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | IXYS |
| Package/Case: | D3PAK-3(TO-268-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Moisture Sensitive: | Yes |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 30 |
| Pd - Power Dissipation: | 520 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 21 ns |
| Typical Turn-Off Delay Time: | 67 ns |
| Id - Continuous Drain Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |