IXTT1N300P3HV, Транзистор N-MOSFET, 3кВ, 1А, 195Вт, TO268HV, 1,8мкс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8074826670
- Артикул
- IXTT1N300P3HV
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 60 ns
- Packaging:
- Tube
- Rise Time:
- 35 ns
Цена по запросу
(от 5 312,54 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 60 ns |
| Packaging: | Tube |
| Rise Time: | 35 ns |
| Вес, г | 4 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | D3PAK-3(TO-268-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 30.6 nC |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 30 |
| Pd - Power Dissipation: | 195 W |
| Typical Turn-On Delay Time: | 22 ns |
| Typical Turn-Off Delay Time: | 78 ns |
| Id - Continuous Drain Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |