IXTT1N250HV, Транзистор N-MOSFET, 2,5кВ, 250Вт, TO268HV, 2,5мкс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062385054
- Артикул
- IXTT1N250HV
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 39 ns
- Packaging:
- Tube
- Rise Time:
- 25 ns
Цена по запросу
(от 6 420 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные IEEE 1500V + Дискретные полупроводниковые транзисторы
Технические параметры
| Brand: | IXYS |
| Fall Time: | 39 ns |
| Packaging: | Tube |
| Rise Time: | 25 ns |
| Вес, г | 4 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | D3PAK-3(TO-268-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 41 nC |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 30 |
| Pd - Power Dissipation: | 250 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 69 ns |
| Typical Turn-Off Delay Time: | 132 ns |
| Id - Continuous Drain Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1 mS |
| Rds On - Drain-Source Resistance: | 40 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 2.5 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |