IXTT02N450HV, Транзистор N-MOSFET, 4,5кВ, 0,2А, 113Вт, TO268HV, 1,6мкс
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- Код товара
- 8062354071
- Артикул
- IXTT02N450HV
- Бренд
- Ixys Corporation
- Case
- TO268HV
- Brand:
- IXYS
- Series:
- IXTT02N450
- Mounting
- SMD
Цена по запросу
(от 4 387,69 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные IEEE 1500V + Дискретные полупроводниковые транзисторы
Технические параметры
| Case | TO268HV |
| Brand: | IXYS |
| Series: | IXTT02N450 |
| Mounting | SMD |
| Fall Time: | 143 ns |
| Packaging: | Tube |
| Rise Time: | 48 ns |
| Вес, г | 4 |
| Technology: | Si |
| Manufacturer | IXYS |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 0.2A |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-268-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 113W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 10.6 nC |
| Type of transistor | N-MOSFET |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| On-state resistance | 625Ω |
| Drain-source voltage | 4.5kV |
| Transistor Polarity: | N-Channel |
| Reverse recovery time | 1.6µs |
| Pd - Power Dissipation: | 113 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 17 ns |
| Typical Turn-Off Delay Time: | 28 ns |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 90 mS |
| Features of semiconductor devices | standard power mosfet |
| Rds On - Drain-Source Resistance: | 625 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 4.5 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |