IXTP3N120, Транзистор N-МОП, полевой, 1200В 3A 200Вт 4,5Ом TO220AB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062073861
- Артикул
- IXTP3N120
- Бренд
- Ixys Corporation
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Type
- N Channel
Цена по запросу
(от 1 158,74 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 1200В 3A 200Вт 4,5Ом TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | N Channel |
| Mounting | Through Hole |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 2.08 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Standard Package Name | TO |
| Power Dissipation (Pd) | 200W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 15 |
| Total Gate Charge (Qg@Vgs) | 42nC@10V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.35nF@25V |
| Continuous Drain Current (Id) | 3A |
| Maximum Power Dissipation (mW) | 200000 |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Gate Charge @ Vgs (nC) | 42@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Operating Junction Temperature (°C) | 150 |
| Typical Input Capacitance @ Vds (pF) | 1100@25V |
| Maximum Drain Source Resistance (mOhm) | 4500@10V |