IXTP2N100P, Транзистор N-MOSFET, 1кВ, 2А, 86Вт, TO220-3, 800нс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062467723
- Артикул
- IXTP2N100P
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 27 ns
- Packaging:
- Tube
- Rise Time:
- 29 ns
Цена по запросу
(от 501,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 27 ns |
| Packaging: | Tube |
| Rise Time: | 29 ns |
| Вес, г | 3 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 24.3 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 86 W |
| Typical Turn-On Delay Time: | 25 ns |
| Typical Turn-Off Delay Time: | 80 ns |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |