IXTP14N60P, Транзистор N-MOSFET, 600В, 14А, 300Вт, TO220-3, 500нс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062912434
- Артикул
- IXTP14N60P
- Бренд
- Ixys Corporation
- Type:
- PolarHV Power MOSFET
- Brand:
- IXYS
- Fall Time:
- 26 ns
- Packaging:
- Tube
Цена по запросу
(от 645,42 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | PolarHV Power MOSFET |
| Brand: | IXYS |
| Fall Time: | 26 ns |
| Packaging: | Tube |
| Rise Time: | 27 ns |
| Вес, г | 3 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 36 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 23 ns |
| Typical Turn-Off Delay Time: | 70 ns |
| Id - Continuous Drain Current: | 14 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 7 S |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 5.5 V |