IXTP05N100M, Транзистор: N-MOSFET, полевой, 1кВ, 0,7А, 25Вт, TO220FP, 710нс
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- Код товара
- 8062310841
- Артикул
- IXTP05N100M
- Бренд
- Ixys Corporation
- Type:
- High Voltage MOSFET
- Brand:
- IXYS
- Series:
- IXTP05N100
- Fall Time:
- 28 ns
Цена по запросу
(от 568,53 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | High Voltage MOSFET |
| Brand: | IXYS |
| Series: | IXTP05N100 |
| Fall Time: | 28 ns |
| Packaging: | Tube |
| Rise Time: | 19 ns |
| Вес, г | 2.19 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 25 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 40 ns |
| Id - Continuous Drain Current: | 700 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.55 S |
| Rds On - Drain-Source Resistance: | 15 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |