IXTP02N120P, Транзистор: N-MOSFET, полевой, 1,2кВ, 0,2А, 33Вт, TO220-3, 1,6мкс
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- Код товара
- 8062447363
- Артикул
- IXTP02N120P
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 39 ns
- Packaging:
- Tube
- Rise Time:
- 10 ns
Цена по запросу
(от 402,03 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 39 ns |
| Packaging: | Tube |
| Rise Time: | 10 ns |
| Вес, г | 3 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.7 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Power Dissipation (Pd) | 33W |
| Pd - Power Dissipation: | 33 W |
| Total Gate Charge (Qg@Vgs) | 4.7nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Input Capacitance (Ciss@Vds) | 104pF@25V |
| Typical Turn-Off Delay Time: | 21 ns |
| Continuous Drain Current (Id) | 200mA |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.12 S |
| Rds On - Drain-Source Resistance: | 60 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |