IXTL2N450, Транзистор N-MOSFET, 4,5кВ, 2А, 220Вт, ISOPLUS i5-pac™, 1,75мкс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062467671
- Артикул
- IXTL2N450
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Series:
- IXTL2N450
- Fall Time:
- 205 ns
- Packaging:
- Tube
Цена по запросу
(от 20 560 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные IEEE 1500V + Дискретные полупроводниковые транзисторы
Технические параметры
| Brand: | IXYS |
| Series: | IXTL2N450 |
| Fall Time: | 205 ns |
| Packaging: | Tube |
| Rise Time: | 34 ns |
| Вес, г | 6 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | ISOPLUS-i4-PAK-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 220 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 40 ns |
| Typical Turn-Off Delay Time: | 123 ns |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2.1 S |
| Rds On - Drain-Source Resistance: | 20 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 4.5 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |