IXTK170P10P, Транзистор P-МОП, полевой, 100В 170A 890Вт 0,012Ом TO264AA
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- Код товара
- 8061918521
- Артикул
- IXTK170P10P
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Series:
- IXTK170P10
- Fall Time:
- 45 ns
- Packaging:
- Tube
Цена по запросу
(от 2 781,24 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Series: | IXTK170P10 |
| Fall Time: | 45 ns |
| Packaging: | Tube |
| Rise Time: | 75 ns |
| Вес, г | 9.83 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-264-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 240 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 890 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 32 ns |
| Typical Turn-Off Delay Time: | 82 ns |
| Id - Continuous Drain Current: | 170 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 35 S |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |