IXTH2N300P3HV, Транзистор N-MOSFET, 3кВ, 2А, 520Вт, TO247HV, 400нс
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062910637
- Артикул
- IXTH2N300P3HV
- Бренд
- Ixys Corporation
- Type:
- High Voltage
- Brand:
- IXYS
- Product:
- Power MOSFET Modules
- Fall Time:
- 62 ns
Цена по запросу
(от 6 060 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | High Voltage |
| Brand: | IXYS |
| Product: | Power MOSFET Modules |
| Fall Time: | 62 ns |
| Packaging: | Tube |
| Rise Time: | 17 ns |
| Вес, г | 6 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | TO-247-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 73 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 30 |
| Pd - Power Dissipation: | 520 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 21 ns |
| Typical Turn-Off Delay Time: | 69 ns |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 21 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 3 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |