IXTH1N250, 2.5kV 1.5A 250W 40 @10V 4V@250uA 1 N-Channel TO-247AD MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048620931
- Артикул
- IXTH1N250
- Бренд
- Ixys Corporation
- Type:
- Power MOSFET
- Brand:
- IXYS
- Series:
- IXTH1N250
- Fall Time:
- 39 ns
Цена по запросу
(от 7 030 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные IEEE 1500V + Дискретные полупроводниковые транзисторы
Технические параметры
| Type: | Power MOSFET |
| Brand: | IXYS |
| Series: | IXTH1N250 |
| Fall Time: | 39 ns |
| Packaging: | Tube |
| Rise Time: | 25 ns |
| Вес, г | 7.57 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 250 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 69 ns |
| Typical Turn-Off Delay Time: | 132 ns |
| Id - Continuous Drain Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1 mS |
| Rds On - Drain-Source Resistance: | 40 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 2.5 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |