IXTH11P50, Транзистор: P-MOSFET, полевой, -500В, -11А, 300Вт, TO247-3, 500нс
нет фото
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070822727
- Артикул
- IXTH11P50
- Бренд
- Littelfuse
- RoHS
- Details
- Type
- Standard Power MOSFET
- Brand
- IXYS
- Width
- 5.3 mm
Цена по запросу
(от 1 929,88 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор: P-MOSFET, полевой, -500В, -11А, 300Вт, TO247-3, 500нс
Технические параметры
| RoHS | Details |
| Type | Standard Power MOSFET |
| Brand | IXYS |
| Width | 5.3 mm |
| Height | 21.46 mm |
| Length | 16.26 mm |
| Series | IXTH11P50 |
| Fall Time | 35 ns |
| Packaging | Tube |
| Rise Time | 27 ns |
| Technology | Si |
| Вес, г | 8.08 |
| Unit Weight | 0.229281 oz |
| Channel Mode | Enhancement |
| Manufacturer | IXYS |
| Configuration | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 130 nC |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 30 |
| Pd - Power Dissipation | 300 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 33 ns |
| Typical Turn-Off Delay Time | 35 ns |
| Id - Continuous Drain Current | -11 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 5 S |
| Rds On - Drain-Source Resistance | 750 mOhms |
| Vds - Drain-Source Breakdown Voltage | -500 V |
| Vgs th - Gate-Source Threshold Voltage | -0.122 V |