IXTH110N25T, Транзистор: N-MOSFET, полевой, 250В, 110А, 694Вт, TO247-3, 170нс
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- Код товара
- 8062885688
- Артикул
- IXTH110N25T
- Бренд
- Ixys Corporation
- Case
- TO247-3
- Series
- Trench
- Mounting
- THT
- Pin Count
- 3
Цена по запросу
(от 1 193,28 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 250В, 110А, 694Вт, TO247-3, 170нс Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO247-3 |
| Series | Trench |
| Mounting | THT |
| Pin Count | 3 |
| Вес, г | 6.26 |
| Gate charge | 157nC |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | IXYS |
| Package Type | TO-247 |
| Polarisation | unipolar |
| Drain current | 110A |
| Mounting Type | Through Hole |
| Kind of channel | enhanced |
| Kind of package | tube |
| Power dissipation | 694W |
| Type of transistor | N-MOSFET |
| On-state resistance | 26mΩ |
| Drain-source voltage | 250V |
| Forward Diode Voltage | 1.2V |
| Reverse recovery time | 170ns |
| Maximum Power Dissipation | 694 W |
| Typical Gate Charge @ Vgs | 157 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 24 mΩ |
| Maximum Continuous Drain Current | 110 A |
| Features of semiconductor devices | thrench gate power mosfet |