IXTF1N450, PAK-I4 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062467670
- Артикул
- IXTF1N450
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 120 ns
- Packaging:
- Tube
- Rise Time:
- 43 ns
Цена по запросу
(от 16 580 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные IEEE 1500V + Дискретные полупроводниковые транзисторы
Технические параметры
| Brand: | IXYS |
| Fall Time: | 120 ns |
| Packaging: | Tube |
| Rise Time: | 43 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | ISOPLUS-i4-PAK-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 46 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 25 |
| Pd - Power Dissipation: | 160 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 30 ns |
| Typical Turn-Off Delay Time: | 73 ns |
| Id - Continuous Drain Current: | 900 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.4 S |
| Rds On - Drain-Source Resistance: | 80 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 4.5 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |