IXTA96P085T-TRL, TO-263 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062108995
- Артикул
- IXTA96P085T-TRL
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 22 ns
- Rise Time:
- 34 ns
- Tradename:
- Trench
Цена по запросу
(от 830 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 22 ns |
| Rise Time: | 34 ns |
| Tradename: | Trench |
| Вес, г | 7.62 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 298 W |
| Vgs - Gate-Source Voltage: | -15 V, +15 V |
| Typical Turn-On Delay Time: | 23 ns |
| Typical Turn-Off Delay Time: | 45 ns |
| Id - Continuous Drain Current: | 96 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 40 S |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 85 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |