IXTA60N10T-TRL, MOSFETs IXTA60N10T TRL
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8018689022
- Артикул
- IXTA60N10T-TRL
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 37 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 40 ns
Цена по запросу
(от 321,88 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 37 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 40 ns |
| Вес, г | 4 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 49 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 800 |
| Особенности | - |
| Pd - Power Dissipation: | 176 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 27 ns |
| Typical Turn-Off Delay Time: | 43 ns |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 25 S |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |