IXTA3N150HV, Транзистор N-MOSFET, 1,5кВ, 3А, 250Вт, TO263, 900нс
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- Код товара
- 8067176096
- Артикул
- IXTA3N150HV
- Бренд
- Ixys Corporation
- Case
- TO263
- Brand:
- IXYS
- Mounting
- SMD
- Fall Time:
- 25 ns
Цена по запросу
(от 1 519,98 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высоковольтные IEEE 1500V + Дискретные полупроводниковые транзисторы
Технические параметры
| Case | TO263 |
| Brand: | IXYS |
| Mounting | SMD |
| Fall Time: | 25 ns |
| Packaging: | Tube |
| Rise Time: | 21 ns |
| Вес, г | 2.5 |
| Gate charge | 38.6nC |
| Technology: | Si |
| Manufacturer | IXYS |
| Polarisation | unipolar |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Drain current | 3A |
| Manufacturer: | IXYS |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 250W |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 38.6 nC |
| Type of transistor | N-MOSFET |
| Number of Channels: | 1 Channel |
| Drain-source voltage | 1.5kV |
| Transistor Polarity: | N-Channel |
| Reverse recovery time | 900ns |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 250 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 19 ns |
| Typical Turn-Off Delay Time: | 42 ns |
| Id - Continuous Drain Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2.2 S |
| Features of semiconductor devices | standard power mosfet |
| Rds On - Drain-Source Resistance: | 7.3 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1.5 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |