IXTA3N120, Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8003128764
- Артикул
- IXTA3N120
- Бренд
- Littelfuse
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 1 650 ₽)
Минимальный заказ: 19 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 1,2 кВ 3А 3-контактный (2+ вкладки) D2PAK T/R/Tube
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel|Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.4(Max) |
| Package Length | 10.41(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 25 |
| Структура | N-Channel |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 15 |
| Особенности | высоковольтный |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 200000 |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Gate Charge @ Vgs (nC) | 42@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 110 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Typical Gate to Drain Charge (nC) | 21 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 8 |
| Typical Reverse Recovery Time (ns) | 700 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1100@25V |
| Maximum Drain Source Resistance (MOhm) | 4500@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 12 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 40@25V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 1200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |