IXTA10P50P, Trans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002436375
- Артикул
- IXTA10P50P
- Бренд
- Littelfuse
- Tab
- Tab
- PPAP
- Unknown
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 904 ₽)
Минимальный заказ: 31 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 500V 10A 3-контактный (2+Tab) D2PAK
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | Unknown |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 10 |
| Структура | MOSFET |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 44 |
| Typical Rise Time (ns) | 28 |
| Особенности | высоковольтный |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Gate Charge @ 10V (nC) | 50 |
| Typical Gate Charge @ Vgs (nC) | 50@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 275 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Gate Plateau Voltage (V) | 5.3 |
| Typical Turn-Off Delay Time (ns) | 52 |
| Maximum Diode Forward Voltage (V) | 3 |
| Typical Gate to Drain Charge (nC) | 18 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 17 |
| Typical Reverse Recovery Time (ns) | 414 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2840@25V |
| Typical Reverse Recovery Charge (nC) | 5900 |
| Maximum Drain Source Resistance (mOhm) | 1000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 42@25V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |